FQB7N30TM vs FQB7N80TM

Product Attributes

Part Number FQB7N30TM FQB7N80TM
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQB7N30TM FQB7N80TM
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 6.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 3.5A, 10V 1.5Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 610 pF @ 25 V 1850 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 85W (Tc) 3.13W (Ta), 167W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB