FQB4N20TM vs FQB34N20TM

Product Attributes

Part Number FQB4N20TM FQB34N20TM
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQB4N20TM FQB34N20TM
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 200 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Tc) 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.4Ohm @ 1.8A, 10V 75mOhm @ 15.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.5 nC @ 10 V 78 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 220 pF @ 25 V 3100 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.13W (Ta), 45W (Tc) 3.13W (Ta), 180W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB