FQB19N10LTM vs FQB19N10TM

Product Attributes

Part Number FQB19N10LTM FQB19N10TM
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQB19N10LTM FQB19N10TM
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 19A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 9.5A, 10V 100mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 5 V 25 nC @ 10 V
Vgs (Max) ±20V ±25V
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 25 V 780 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 3.75W (Ta), 75W (Tc) 3.75W (Ta), 75W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB