FQAF13N80 vs FQAF10N80

Product Attributes

Part Number FQAF13N80 FQAF10N80
Manufacturer onsemi Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQAF13N80 FQAF10N80
Product Status Last Time Buy Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 750mOhm @ 4A, 10V 1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3500 pF @ 25 V 2700 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tc) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF TO-3PF
Package / Case TO-3P-3 Full Pack TO-3P-3 Full Pack