FQA7N80C vs FQA8N80C

Product Attributes

Part Number FQA7N80C FQA8N80C
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FQA7N80C FQA8N80C
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 7A (Tc) 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 1.9Ohm @ 3.5A, 10V 1.55Ohm @ 4.2A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1680 pF @ 25 V 2050 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 198W (Tc) 220W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3P TO-3P
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3