FJP5027RTU vs FJPF5027RTU

Product Attributes

Part Number FJP5027RTU FJPF5027RTU
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
FJP5027RTU FJPF5027RTU
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 3 A 3 A
Voltage - Collector Emitter Breakdown (Max) 800 V 800 V
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max) 10µA (ICBO) 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 200mA, 5V 15 @ 200mA, 5V
Power - Max 50 W 40 W
Frequency - Transition 15MHz 15MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 Full Pack
Supplier Device Package TO-220-3 TO-220F-3