FJN3310RTA vs FJN3315RTA

Product Attributes

Part Number FJN3310RTA FJN3315RTA
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
FJN3310RTA FJN3315RTA
Product Status Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 50 V
Resistor - Base (R1) 10 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) - 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V 33 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
Frequency - Transition 250 MHz 250 MHz
Power - Max 300 mW 300 mW
Mounting Type Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3