FGH50N6S2D vs FGH30N6S2D

Product Attributes

Part Number FGH50N6S2D FGH30N6S2D
Manufacturer onsemi onsemi
Category Transistors - IGBTs - Single Transistors - IGBTs - Single
FGH50N6S2D FGH30N6S2D
Product Status Obsolete Obsolete
IGBT Type - -
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V
Current - Collector (Ic) (Max) 75 A 45 A
Current - Collector Pulsed (Icm) 240 A 108 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A 2.5V @ 15V, 12A
Power - Max 463 W 167 W
Switching Energy 260µJ (on), 250µJ (off) 55µJ (on), 100µJ (off)
Input Type Standard Standard
Gate Charge 70 nC 23 nC
Td (on/off) @ 25°C 13ns/55ns 6ns/40ns
Test Condition 390V, 30A, 3Ohm, 15V 390V, 12A, 10Ohm, 15V
Reverse Recovery Time (trr) 55 ns 46 ns
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Package / Case TO-247-3 TO-247-3
Supplier Device Package TO-247-3 TO-247-3