FF900R12IP4VBOSA1 vs FF900R12IP4DVBOSA1

Product Attributes

Part Number FF900R12IP4VBOSA1 FF900R12IP4DVBOSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Modules Transistors - IGBTs - Modules
FF900R12IP4VBOSA1 FF900R12IP4DVBOSA1
Product Status Not For New Designs Not For New Designs
IGBT Type Trench Field Stop Trench Field Stop
Configuration 2 Independent 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 900 A 900 A
Power - Max 5100 W 5100 W
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 900A 2.05V @ 15V, 900A
Current - Collector Cutoff (Max) 5 mA 5 mA
Input Capacitance (Cies) @ Vce 54 nF @ 25 V 54 nF @ 25 V
Input Standard Standard
NTC Thermistor Yes Yes
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module