FF8MR12W2M1B11BOMA1 vs FF6MR12W2M1B11BOMA1

Product Attributes

Part Number FF8MR12W2M1B11BOMA1 FF6MR12W2M1B11BOMA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
FF8MR12W2M1B11BOMA1 FF6MR12W2M1B11BOMA1
Product Status Last Time Buy Last Time Buy
FET Type 2 N-Channel (Dual) 2 N-Channel (Dual)
FET Feature Silicon Carbide (SiC) Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1200V (1.2kV) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 150A (Tj) 200A (Tj)
Rds On (Max) @ Id, Vgs 7.5mOhm @ 150A, 15V (Typ) 5.63mOhm @ 200A, 15V
Vgs(th) (Max) @ Id 5.55V @ 60mA 5.55V @ 80mA
Gate Charge (Qg) (Max) @ Vgs 372nC @ 15V 496nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 800V 14700pF @ 800V
Power - Max 20mW (Tc) 20mW (Tc)
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package AG-EASY2BM-2 AG-EASY2BM-2