FF6MR12KM1PHOSA1 vs FF2MR12KM1PHOSA1

Product Attributes

Part Number FF6MR12KM1PHOSA1 FF2MR12KM1PHOSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
FF6MR12KM1PHOSA1 FF2MR12KM1PHOSA1
Product Status Last Time Buy Last Time Buy
FET Type 2 N-Channel (Half Bridge) 2 N-Channel (Half Bridge)
FET Feature Silicon Carbide (SiC) Standard
Drain to Source Voltage (Vdss) 1200V (1.2kV) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 250A (Tc) 500A (Tc)
Rds On (Max) @ Id, Vgs 5.81mOhm @ 250A, 15V 2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id 5.15V @ 80mA 5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs 496nC @ 15V 1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds 14700pF @ 800V 39700pF @ 800V
Power - Max - -
Operating Temperature -40°C ~ 150°C (TJ) -40°C ~ 150°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package AG-62MM AG-62MM