| Part Number | FF650R17IE4DB2BOSA1 | FF650R17IE4DPB2BOSA1 |
|---|---|---|
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Category | Transistors - IGBTs - Modules | Transistors - IGBTs - Modules |
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| Product Status | Active | Active |
| IGBT Type | - | Trench Field Stop |
| Configuration | 2 Independent | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | 1700 V |
| Current - Collector (Ic) (Max) | - | 650 A |
| Power - Max | 4150 W | - |
| Vce(on) (Max) @ Vge, Ic | 2.45V @ 15V, 650A | 2.45V @ 15V, 650A |
| Current - Collector Cutoff (Max) | 5 mA | 5 mA |
| Input Capacitance (Cies) @ Vce | 54 nF @ 25 V | 54 nF @ 25 V |
| Input | Standard | Standard |
| NTC Thermistor | Yes | Yes |
| Operating Temperature | -40°C ~ 150°C | -40°C ~ 150°C |
| Mounting Type | Chassis Mount | Chassis Mount |
| Package / Case | Module | Module |
| Supplier Device Package | Module | Module |