FF600R12ME4EB11BOSA1 vs FF600R12ME4CB11BOSA1

Product Attributes

Part Number FF600R12ME4EB11BOSA1 FF600R12ME4CB11BOSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Modules Transistors - IGBTs - Modules
FF600R12ME4EB11BOSA1 FF600R12ME4CB11BOSA1
Product Status Discontinued at Digi-Key Discontinued at Digi-Key
IGBT Type Trench Field Stop Trench Field Stop
Configuration Half Bridge 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) 995 A 1060 A
Power - Max 4050 W 4050 W
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 600A 2.1V @ 15V, 600A
Current - Collector Cutoff (Max) 3 mA 3 mA
Input Capacitance (Cies) @ Vce 37 nF @ 25 V 37 nF @ 25 V
Input Standard Standard
NTC Thermistor Yes Yes
Operating Temperature -40°C ~ 150°C -40°C ~ 150°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module