FF200R17KE4HOSA1 vs FF200R17KE3HOSA1

Product Attributes

Part Number FF200R17KE4HOSA1 FF200R17KE3HOSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Modules Transistors - IGBTs - Modules
FF200R17KE4HOSA1 FF200R17KE3HOSA1
Product Status Active Active
IGBT Type Trench Field Stop Trench Field Stop
Configuration 2 Independent Half Bridge
Voltage - Collector Emitter Breakdown (Max) 1700 V 1700 V
Current - Collector (Ic) (Max) 310 A 310 A
Power - Max 1250 W 1250 W
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 200A 2.45V @ 15V, 200A
Current - Collector Cutoff (Max) 1 mA 3 mA
Input Capacitance (Cies) @ Vce 18 nF @ 25 V 18 nF @ 25 V
Input Standard Standard
NTC Thermistor No No
Operating Temperature -40°C ~ 150°C -40°C ~ 125°C (TJ)
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module