FF200R12KT3HOSA1 vs FF200R12KT3EHOSA1

Product Attributes

Part Number FF200R12KT3HOSA1 FF200R12KT3EHOSA1
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors - IGBTs - Modules Transistors - IGBTs - Modules
FF200R12KT3HOSA1 FF200R12KT3EHOSA1
Product Status Not For New Designs Not For New Designs
IGBT Type Trench Field Stop -
Configuration 2 Independent 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V 1200 V
Current - Collector (Ic) (Max) - -
Power - Max 1050 W 1050 W
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A 2.15V @ 15V, 200A
Current - Collector Cutoff (Max) 5 mA 5 mA
Input Capacitance (Cies) @ Vce 14 nF @ 25 V 14 nF @ 25 V
Input Standard Standard
NTC Thermistor No No
Operating Temperature -40°C ~ 125°C -40°C ~ 125°C
Mounting Type Chassis Mount Chassis Mount
Package / Case Module Module
Supplier Device Package Module Module