FDZ191P vs FDZ291P

Product Attributes

Part Number FDZ191P FDZ291P
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDZ191P FDZ291P
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 85mOhm @ 1A, 4.5V 40mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 13 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 10 V 1010 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.9W (Ta) 1.7W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 6-WLCSP (1x1.5) 9-BGA (1.5x1.6)
Package / Case 6-UFBGA, WLCSP 9-VFBGA