FDS4465 vs FDS4435

Product Attributes

Part Number FDS4465 FDS4435
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDS4465 FDS4435
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta) 8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 13.5A, 4.5V 20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 120 nC @ 4.5 V 24 nC @ 5 V
Vgs (Max) ±8V ±25V
Input Capacitance (Ciss) (Max) @ Vds 8237 pF @ 10 V 1604 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)