FDP027N08B-F102 vs FDP023N08B-F102

Product Attributes

Part Number FDP027N08B-F102 FDP023N08B-F102
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDP027N08B-F102 FDP023N08B-F102
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V 2.35mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V 195 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13530 pF @ 40 V 13765 pF @ 37.5 V
FET Feature - -
Power Dissipation (Max) 246W (Tc) 245W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3