FDN338P vs FDN358P

Product Attributes

Part Number FDN338P FDN358P
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDN338P FDN358P
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta) 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 115mOhm @ 1.6A, 4.5V 125mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V 5.6 nC @ 10 V
Vgs (Max) ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 451 pF @ 10 V 182 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3