FDMS3660S vs FDMS3669S

Product Attributes

Part Number FDMS3660S FDMS3669S
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
FDMS3660S FDMS3669S
Product Status Active Active
FET Type 2 N-Channel (Dual) Asymmetrical 2 N-Channel (Dual) Asymmetrical
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 30A, 60A 13A, 18A
Rds On (Max) @ Id, Vgs 8mOhm @ 13A, 10V 10mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 15V 1605pF @ 15V
Power - Max 1W 1W
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-PowerTDFN 8-PowerTDFN
Supplier Device Package Power56 Power56