FDMC86261P vs FDMC86262P

Product Attributes

Part Number FDMC86261P FDMC86262P
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDMC86261P FDMC86262P
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 2.7A (Ta), 9A (Tc) 2A (Ta), 8.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 2.4A, 10V 307mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V 13 nC @ 10 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1360 pF @ 75 V 885 pF @ 75 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 40W (Tc) 2.3W (Ta), 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-MLP (3.3x3.3) 8-MLP (3.3x3.3)
Package / Case 8-PowerWDFN 8-PowerWDFN