FDD5N50TM-WS vs FDD5N50FTM-WS

Product Attributes

Part Number FDD5N50TM-WS FDD5N50FTM-WS
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDD5N50TM-WS FDD5N50FTM-WS
Product Status Obsolete Last Time Buy
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 500 V -
Current - Continuous Drain (Id) @ 25°C 4A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 1.4Ohm @ 2A, 10V -
Vgs(th) (Max) @ Id 5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V -
Vgs (Max) ±30V -
Input Capacitance (Ciss) (Max) @ Vds 640 pF @ 25 V -
FET Feature - -
Power Dissipation (Max) 40W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package TO-252AA -
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 -