FDD2612 vs FDD5612

Product Attributes

Part Number FDD2612 FDD5612
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDD2612 FDD5612
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 60 V
Current - Continuous Drain (Id) @ 25°C 4.9A (Ta) 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 6V, 10V
Rds On (Max) @ Id, Vgs 720mOhm @ 1.5A, 10V 55mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 234 pF @ 100 V 660 pF @ 30 V
FET Feature - -
Power Dissipation (Max) 42W (Ta) 3.8W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252, (D-Pak) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63