FDD2670 vs FDD3670

Product Attributes

Part Number FDD2670 FDD3670
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDD2670 FDD3670
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V 100 V
Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) 34A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 6V, 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 3.6A, 10V 32mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 43 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1228 pF @ 100 V 2490 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 3.2W (Ta), 70W (Tc) 3.8W (Ta), 83W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63