FDC638P vs FDC636P

Product Attributes

Part Number FDC638P FDC636P
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDC638P FDC636P
Product Status Active Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta) 2.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 48mOhm @ 4.5A, 4.5V 130mOhm @ 2.8A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 4.5 V 8.5 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1160 pF @ 10 V 390 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6