FDB8860 vs FDB8870

Product Attributes

Part Number FDB8860 FDB8870
Manufacturer onsemi Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDB8860 FDB8870
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 23A (Ta), 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.3mOhm @ 80A, 10V 3.9mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 214 nC @ 10 V 132 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 12585 pF @ 15 V 5200 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 254W (Tc) 160W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB