FDAF59N30 vs FDA59N30

Product Attributes

Part Number FDAF59N30 FDA59N30
Manufacturer Fairchild Semiconductor onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDAF59N30 FDA59N30
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V 300 V
Current - Continuous Drain (Id) @ 25°C 34A (Tc) 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 56mOhm @ 17A, 10V 56mOhm @ 29.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V 100 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 4670 pF @ 25 V 4670 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 161W (Tc) 500W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PF TO-3PN
Package / Case TO-3P-3 Full Pack TO-3P-3, SC-65-3