FDB20N50F vs FDA20N50F

Product Attributes

Part Number FDB20N50F FDA20N50F
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FDB20N50F FDA20N50F
Product Status Active Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 20A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 260mOhm @ 10A, 10V 260mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V 65 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3390 pF @ 25 V 3390 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 250W (Tc) 388W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Through Hole
Supplier Device Package D²PAK (TO-263) TO-3PN
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-3P-3, SC-65-3