FCPF650N80Z vs FCPF850N80Z

Product Attributes

Part Number FCPF650N80Z FCPF850N80Z
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FCPF650N80Z FCPF850N80Z
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 4A, 10V 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 800µA 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1565 pF @ 100 V 1315 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 30.5W (Tc) 28.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220F-3
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack