FCPF400N80Z vs FCP400N80Z

Product Attributes

Part Number FCPF400N80Z FCP400N80Z
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FCPF400N80Z FCP400N80Z
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 400mOhm @ 5.5A, 10V 400mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.1mA 4.5V @ 1.1mA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2350 pF @ 100 V 2350 pF @ 1000 V
FET Feature - -
Power Dissipation (Max) 35.7W (Tc) 195W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220F-3 TO-220-3
Package / Case TO-220-3 Full Pack TO-220-3