FCI25N60N vs FCP25N60N

Product Attributes

Part Number FCI25N60N FCP25N60N
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FCI25N60N FCP25N60N
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 125mOhm @ 12.5A, 10V 125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 3352 pF @ 100 V 3352 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 216W (Tc) 216W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package I2PAK (TO-262) TO-220-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA TO-220-3