FCP22N60N vs FCH22N60N

Product Attributes

Part Number FCP22N60N FCH22N60N
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FCP22N60N FCH22N60N
Product Status Last Time Buy Last Time Buy
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 11A, 10V 165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 45 nC @ 10 V
Vgs (Max) ±45V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 100 V 1950 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 205W (Tc) 205W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-247-3
Package / Case TO-220-3 TO-247-3