FCP150N65F vs FCP110N65F

Product Attributes

Part Number FCP150N65F FCP110N65F
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FCP150N65F FCP110N65F
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 24A (Tc) 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 12A, 10V 110mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.4mA 5V @ 3.5mA
Gate Charge (Qg) (Max) @ Vgs 93 nC @ 10 V 145 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3737 pF @ 100 V 4895 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 298W (Tc) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3