FCH165N60E vs FCP165N60E

Product Attributes

Part Number FCH165N60E FCP165N60E
Manufacturer onsemi onsemi
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
FCH165N60E FCP165N60E
Product Status Active Active
FET Type N-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 600 V -
Current - Continuous Drain (Id) @ 25°C 23A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 165mOhm @ 11.5A, 10V -
Vgs(th) (Max) @ Id 3.5V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V -
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 2434 pF @ 380 V -
FET Feature - -
Power Dissipation (Max) 227W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole -
Supplier Device Package TO-247-3 -
Package / Case TO-247-3 -