EMZ1DXV6T1G vs EMZ1DXV6T5G

Product Attributes

Part Number EMZ1DXV6T1G EMZ1DXV6T5G
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - Arrays Transistors - Bipolar (BJT) - Arrays
EMZ1DXV6T1G EMZ1DXV6T5G
Product Status Obsolete Obsolete
Transistor Type NPN, PNP NPN, PNP
Current - Collector (Ic) (Max) 100mA 100mA
Voltage - Collector Emitter Breakdown (Max) 60V 60V
Vce Saturation (Max) @ Ib, Ic 400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA 400mV @ 5mA, 50mA, 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max) 500nA (ICBO) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 6V 120 @ 1mA, 6V
Power - Max 500mW 500mW
Frequency - Transition 180MHz, 140MHz 180MHz, 140MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case SOT-563, SOT-666 SOT-563, SOT-666
Supplier Device Package SOT-563 SOT-563