EC4H08C-TL-H vs EC4H09C-TL-H

Product Attributes

Part Number EC4H08C-TL-H EC4H09C-TL-H
Manufacturer onsemi onsemi
Category Transistors - Bipolar (BJT) - RF Transistors - Bipolar (BJT) - RF
EC4H08C-TL-H EC4H09C-TL-H
Product Status Obsolete Obsolete
Transistor Type NPN NPN
Voltage - Collector Emitter Breakdown (Max) 3.5V 3.5V
Frequency - Transition 24GHz 26GHz
Noise Figure (dB Typ @ f) 1.5dB @ 2GHz 1.3dB @ 2GHz
Gain 17dB 15dB
Power - Max 50mW 120mW
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA, 1V 70 @ 5mA, 1V
Current - Collector (Ic) (Max) 15mA 40mA
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 4-UFDFN 4-UFDFN
Supplier Device Package 4-ECSP1008 4-ECSP1008