| Part Number | DXTN5860DFDB-7 | DXTN5820DFDB-7 |
|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 6 A | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 315mV @ 300mA, 6A | 275mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 100nA | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 280 @ 500mA, 2V | 280 @ 500mA, 2V |
| Power - Max | 690 mW | 690 mW |
| Frequency - Transition | 115MHz | 80MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 3-UDFN Exposed Pad | 3-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-3 (Type B) | U-DFN2020-3 (Type B) |