DXTP5840CFDB-7 vs DXTN5840CFDB-7

Product Attributes

Part Number DXTP5840CFDB-7 DXTN5840CFDB-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
DXTP5840CFDB-7 DXTN5840CFDB-7
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 4.8 A 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 370mV @ 30mA, 3A 350mV @ 30mA, 3A
Current - Collector Cutoff (Max) 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 10mA, 2V 200 @ 1A, 2V
Power - Max 690 mW 690 mW
Frequency - Transition 135MHz 150MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-UDFN Exposed Pad 3-UDFN Exposed Pad
Supplier Device Package U-DFN2020-3 (Type B) U-DFN2020-3 (Type B)