| Part Number | DXTN10060DFJBWQ-7 | DXTN10060DFJBQ-7 |
|---|---|---|
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Category | Transistors - Bipolar (BJT) - Single | Transistors - Bipolar (BJT) - Single |
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| Product Status | Active | Active |
| Transistor Type | NPN | NPN |
| Current - Collector (Ic) (Max) | 4 A | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 320mV @ 200mA, 4A | 320mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 100nA | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 340 @ 200mA, 2V | 340 @ 200mA, 2V |
| Power - Max | 1.8 W | 1.8 W |
| Frequency - Transition | 125MHz | 125MHz |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Package / Case | 3-UDFN Exposed Pad | 3-UDFN Exposed Pad |
| Supplier Device Package | W-DFN2020-3 (Type A) | U-DFN2020-3 (Type B) |