DXT2013P5-13 vs DXT2012P5-13

Product Attributes

Part Number DXT2013P5-13 DXT2012P5-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
DXT2013P5-13 DXT2012P5-13
Product Status Active Active
Transistor Type PNP PNP
Current - Collector (Ic) (Max) 5 A 5.5 A
Voltage - Collector Emitter Breakdown (Max) 100 V 60 V
Vce Saturation (Max) @ Ib, Ic 340mV @ 400mA, 4A 250mV @ 500mA, 5A
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 1V 100 @ 2A, 1V
Power - Max 3.2 W 3.2 W
Frequency - Transition 125MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case PowerDI™ 5 PowerDI™ 5
Supplier Device Package PowerDI™ 5 PowerDI™ 5