DXT2012P5-13 vs DXT2011P5-13

Product Attributes

Part Number DXT2012P5-13 DXT2011P5-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single Transistors - Bipolar (BJT) - Single
DXT2012P5-13 DXT2011P5-13
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 5.5 A 6 A
Voltage - Collector Emitter Breakdown (Max) 60 V 100 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 500mA, 5A 220mV @ 500mA, 5A
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V 100 @ 2A, 2V
Power - Max 3.2 W 3.2 W
Frequency - Transition 120MHz 130MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case PowerDI™ 5 PowerDI™ 5
Supplier Device Package PowerDI™ 5 PowerDI™ 5