DRDNB16W-7 vs DRDNB26W-7

Product Attributes

Part Number DRDNB16W-7 DRDNB26W-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - Bipolar (BJT) - Single, Pre-Biased Transistors - Bipolar (BJT) - Single, Pre-Biased
DRDNB16W-7 DRDNB26W-7
Product Status Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased + Diode
Current - Collector (Ic) (Max) 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 1 kOhms 220 Ohms
Resistor - Emitter Base (R2) 10 kOhms 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V 47 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA 300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max) 500nA 500nA
Frequency - Transition 200 MHz 200 MHz
Power - Max 200 mW 200 mW
Mounting Type Surface Mount Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363
Supplier Device Package SOT-363 SOT-363