DMTH10H2M5STLWQ-13 vs DMTH10H2M5STLW-13

Product Attributes

Part Number DMTH10H2M5STLWQ-13 DMTH10H2M5STLW-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMTH10H2M5STLWQ-13 DMTH10H2M5STLW-13
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 215A (Tc) 215A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.5mOhm @ 30A, 10V 2.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 124.4 nC @ 10 V 124.4 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 8450 pF @ 50 V 8450 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 5.8W (Ta), 230.8W (Tc) 5.8W (Ta), 230.8W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-363 POWERDI1012-8
Package / Case 6-TSSOP, SC-88, SOT-363 8-PowerSFN