DMT3009LFVW-7 vs DMT3009LFVWQ-7

Product Attributes

Part Number DMT3009LFVW-7 DMT3009LFVWQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMT3009LFVW-7 DMT3009LFVWQ-7
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 50A (Tc) 12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 3.8V, 10V 3.8V, 10V
Rds On (Max) @ Id, Vgs 11mOhm @ 14.4A, 10V 11mOhm @ 14.4A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10 V 12 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 823 pF @ 15 V 823 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 2.3W (Ta) 2.3W (Ta), 35.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount, Wettable Flank Surface Mount, Wettable Flank
Supplier Device Package PowerDI3333-8 (SWP) Type UX PowerDI3333-8 (SWP) Type UX
Package / Case 8-PowerVDFN 8-PowerVDFN