DMT10H015LSS-13 vs DMT10H025LSS-13

Product Attributes

Part Number DMT10H015LSS-13 DMT10H025LSS-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMT10H015LSS-13 DMT10H025LSS-13
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 8.3A (Ta) 7.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 20A, 10V 25mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V 22.9 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V 1639 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 1.2W (Ta) 1.3W (Ta), 12.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)