DMT10H015LK3-13 vs DMT10H010LK3-13

Product Attributes

Part Number DMT10H015LK3-13 DMT10H010LK3-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMT10H015LK3-13 DMT10H010LK3-13
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 50A (Tc) 68.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 20A, 10V 8.8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 33.3 nC @ 10 V 53.7 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1871 pF @ 50 V 2592 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 2.9W (Ta) 3W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252-3 TO-252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63