DMN4800LSS-13 vs DMN4800LSSQ-13

Product Attributes

Part Number DMN4800LSS-13 DMN4800LSSQ-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMN4800LSS-13 DMN4800LSSQ-13
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta) 8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 9A, 10V 14mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1.6V @ 250µA 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9.47 nC @ 5 V 8.7 nC @ 5 V
Vgs (Max) ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 798 pF @ 10 V 798 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.46W (Ta) 1.46W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package 8-SO 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)