DMN2710UTQ-7 vs DMN2310UTQ-7

Product Attributes

Part Number DMN2710UTQ-7 DMN2310UTQ-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMN2710UTQ-7 DMN2310UTQ-7
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 870mA (Ta) 1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 450mOhm @ 600mA, 4.5V 240mOhm @ 300mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.6 nC @ 4.5 V 0.7 nC @ 4.5 V
Vgs (Max) ±6V ±8V
Input Capacitance (Ciss) (Max) @ Vds 42 pF @ 16 V 38 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 320mW (Ta) 290mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-523 SOT-523
Package / Case SOT-523 SOT-523