DMN2019UTS-13 vs DMN2016UTS-13

Product Attributes

Part Number DMN2019UTS-13 DMN2016UTS-13
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Arrays Transistors - FETs, MOSFETs - Arrays
DMN2019UTS-13 DMN2016UTS-13
Product Status Active Active
FET Type 2 N-Channel (Dual) Common Drain 2 N-Channel (Dual) Common Drain
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 20V 20V
Current - Continuous Drain (Id) @ 25°C 5.4A 8.58A
Rds On (Max) @ Id, Vgs 18.5mOhm @ 7A, 10V 14.5mOhm @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V 16.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 143pF @ 10V 1495pF @ 10V
Power - Max 780mW 880mW
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 8-TSSOP (0.173", 4.40mm Width) 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package 8-TSSOP 8-TSSOP