DMN2011UFDF-7 vs DMN2011UFDE-7

Product Attributes

Part Number DMN2011UFDF-7 DMN2011UFDE-7
Manufacturer Diodes Incorporated Diodes Incorporated
Category Transistors - FETs, MOSFETs - Single Transistors - FETs, MOSFETs - Single
DMN2011UFDF-7 DMN2011UFDE-7
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 14.2A (Ta) 11.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 9.5mOhm @ 7A, 4.5V 9.5mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V 56 nC @ 10 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 2248 pF @ 10 V 2248 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta) 610mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package U-DFN2020-6 (Type F) U-DFN2020-6 (Type E)
Package / Case 6-UDFN Exposed Pad 6-PowerUDFN